Работы, цитирующие эту работу

Работ: 3

Работа: Semiconductor lasers with internal wavelength selection

1. Electronic structure of Ga1–x Al x As nanostructures grown on the GaAs surface by ion implantation

   S. B. Donaev, Б. Е. Умирзаков, Д. А. Ташмухамедова

   СтатьяIon-surface interactions and analysisTechnical Physics2015Цитирований: 13

   ABIABI:AkademIndex/openalex/2026.other.095299

2. Electronic and Optical Properties of GaAlAs/GaAs Thin Films

   Б. Е. Умирзаков, S. B. Donaev, N. M. Mustafaeva

   СтатьяPhotocathodes and Microchannel PlatesTechnical Physics2019Цитирований: 8

   ABIABI:AkademIndex/openalex/2026.other.232443

3. The Effect of Stepwise Postimplantation Annealing on the Composition and Structure of Silicon Surface Layers Implanted with Alkali Metal Ions

   Б. Е. Умирзаков, З. А. Исаханов, G. Kh. Allaerova +1

   СтатьяSemiconductor materials and interfacesTechnical Physics Letters2021Цитирований: 0

   ABIABI:AkademIndex/openalex/2021.article.004233