Работы, цитирующие эту работу

Работ: 2

Работа: Fabrication and Characterization of Stacked Poly-Si Nanosheet With Gate-All-Around and Multi-Gate Junctionless Field Effect Transistors

1. Optimization of vertically stacked nanosheet FET immune to self-heating

   M. Balasubbareddy, K. Sivasankaran, A. É. Atamuratov +1

   СтатьяSemiconductor materials and devicesMicro and Nanostructures2023Цитирований: 5

   ABIABI:AkademIndex/openalex/2023.article.001165

2. Self-heating-induced junctionless stacked nanosheet FET RF stability performance degradation analysis and optimization

   M. Balasubbareddy, K. Sivasankaran, A. É. Atamuratov +1

   СтатьяSemiconductor materials and devicesJournal of Computational Electronics2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.007736