Работы, цитирующие эту работу

Работ: 2

Работа: On the origin of threading dislocations during epitaxial growth of III-Sb on Si(001): A comprehensive transmission electron tomography and microscopy study

1. A Surface Study of Si Doped Simultaneously with Ga and Sb

   X.M. Iliyev, Sobir B. Isamov, B. O. Isakov +2

   СтатьяSemiconductor Quantum Structures and DevicesEast European Journal of Physics2023Цитирований: 7

   ABIABI:AkademIndex/openalex/2023.article.001190

2. Electrodifusion of Manganese Atoms in Silicon

   Xalmurat M. Iliyev, Zafar B. Khudoynazarov, B. O. Isakov +2

   СтатьяAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics2024Цитирований: 1

   ABIABI:AkademIndex/openalex/2024.article.003062