Работы, цитирующие эту работу

Работ: 2

Работа: An investigation of the crystalline nature for GaSb films on Si(111) at varied growth temperature and growth rate

1. X-Ray Diffraction and Raman Spectroscopy Analyses of GaSb-Enriched Si Surface Formed by Applying Diffusion Doping Technique

   Xalmurat M. Iliyev, В. Б. Оджаев, Sobir B. Isamov +5

   СтатьяSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics2023Цитирований: 6

   ABIABI:AkademIndex/openalex/2023.article.001215

2. The Elemental Composition Investigation of Silicon Doped with Gallium and Antimony Atoms

   Х. М. Илиев, S. Koveshnikov, B. O. Isakov +3

   СтатьяSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry2024Цитирований: 2

   ABIABI:AkademIndex/openalex/2024.article.002753