Работы, цитирующие эту работу

Работ: 3

Работа: Experimental measurements of effective mass in near-surface InAs quantum wells

1. Three-Band Simulation of the <a:math xmlns:a="http://www.w3.org/1998/Math/MathML" id="M1"> <a:mi>g</a:mi> </a:math>-Factor of an Electron in an InAs Quantum Well in Strong Magnetic Fields

   G. Gulyamov, B. T. Abdulazizov, P. J. Baymatov

   СтатьяSemiconductor Quantum Structures and DevicesJournal of Nanomaterials2021Цитирований: 7

   ABIABI:AkademIndex/openalex/2026.other.110166

2. Magnetic field and temperature-dependent band gap modeling in narrow-gap quantum well semiconductors

   Ulugbek Erkaboev, R. G. Rakhimov, J. I. Mirzaev +3

   СтатьяSemiconductor Quantum Structures and DevicesInternational Journal of Modern Physics B2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.009883

3. Magnetic field and temperature dependent band gap modeling in narrow-gap quantum well semiconductors

   Ulugbek Erkaboev, R. G. Rakhimov, J. I. Mirzaev +3

   СтатьяSemiconductor Quantum Structures and DevicesJournal of Computational Electronics2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.011671