Работы, цитирующие эту работу

Работ: 4

Работа: Influence of device geometry on electrical characteristics of a 10.7 nm SOI-FinFET

1. Self-heating effect in nanoscale SOI Junctionless FinFET with different geometries

   A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +2

   ПрепринтAdvancements in Semiconductor Devices and Circuit Design2021Цитирований: 6

   ABIABI:AkademIndex/openalex/2021.preprint.000003

2. The Self-Heating Effect in Junctionless Fin Field-Effect Transistors Based on Silicon-on-Insulator Structures with Different Channel Shapes

   A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +1

   СтатьяAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters2021Цитирований: 5

   ABIABI:AkademIndex/openalex/2021.article.000827

3. Simulation of DIBL effect in 25 nm SOI-FinFET with the different body shapes

   A. É. Atamuratov, A.E. Abdikarimov, M. M. Khalilloev +4

   СтатьяAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics2017Цитирований: 4

   ABIABI:AkademIndex/openalex/2017.article.000161

4. Simulation of DIBL effect in junctionless SOI MOSFETs with extended gate

   A. É. Atamuratov, M. M. Khalilloev, A.E. Abdikarimov +4

   СтатьяAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics2017Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.541483