Работы, цитирующие эту работу

Работ: 2

Работа: The electrical properties of n-CdS/p-CdTe and n-ZnS/p-CdTe heterojunctions fabricated by a combination of SILAR and vacuum deposition techniques

1. Effect of temperature on the current transfer mechanism in the reverse I–V characteristics of the <i>n</i>-CdS/<i>i</i>-CdS_<i>x</i>Te1−x/<i>p</i>-CdTe heterostructure

   А.С. Ачилов, R. R. Kabulov, Sharifa B. Utamuradova +1

   СтатьяChalcogenide Semiconductor Thin FilmsModern Physics Letters B2023Цитирований: 4

   ABIABI:AkademIndex/openalex/2023.article.001297

2. Features of the Electrical Properties of Heterojunctions n-GaAs-p-(GaAs)1 - x - у(Ge2)x(ZnSe)y

   SIRAJIDDIN ZAYNABIDINOV, Akramjon Y. Boboev, DILHAYOTJON ABDURAHIMOV

   СтатьяSemiconductor materials and interfacesComputational nanotechnology2022Цитирований: 0

   ABIABI:AkademIndex/openalex/2022.article.009602