Работы, цитирующие эту работу

Работ: 2

Работа: MESFETs Made From Individual GaN Nanowires

1. Extremely high frequency Schottky diodes based on single GaN nanowires

   K Yu Shugurov, А М Можаров, Vladimir V. Fedorov +3

   СтатьяGaN-based semiconductor devices and materialsNanotechnology2023Цитирований: 0

   ABIABI:AkademIndex/openalex/2023.article.001338

2. Tuning barrier height and enhancing electrical properties of MOS heterojunctions using Fe2O3 doped MoO3 nanocomposite interlayer on Ni/Cr/n-GaN for optoelectronic devices

   Karri Aswini, Chaitanya Kumar Kunapalli, K. Munirathnam +7

   СтатьяSemiconductor materials and interfacesPhysica B Condensed Matter2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.001641