Работы, цитирующие эту работу

Работ: 3

Работа: Formation of selenium-containing complexes in silicon

1. Interaction between multiply charged manganese nanoclusters and sulfur atoms in silicon

   Z.M. Saparniyazova, М. К. Бахадырханов, О. Э. Саттаров +4

   СтатьяSemiconductor materials and interfacesInorganic Materials2012Цитирований: 5

   ABIABI:AkademIndex/openalex/2012.article.000130

2. The High-temperature analysis of silicon properties with manganese-oxygen binary complexes

   M. O. Tursunov, Khalmurat Iliev, B. K. Ismaylov

   СтатьяSemiconductor materials and interfacesPhysical Sciences and Technology2024Цитирований: 3

   ABIABI:AkademIndex/openalex/2024.article.001804

3. Obtaining manganese silicide films on a silicon substrate by the diffusion method

   N. F. Zikrillayev, M. M. Shoabdurahimova, T. Kamilov +4

   СтатьяSemiconductor materials and interfacesPhysical Sciences and Technology2022Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.384841