Работы, цитирующие эту работу

Работ: 2

Работа: SOI versus bulk-silicon nanoscale FinFETs

1. Impact of the channel shape, back oxide and gate oxide layers on self-heating in nanoscale JL FINFET

   A.E. Atamuratov, B.O. Jabbarova, M. M. Khalilloev +3

   СтатьяSemiconductor materials and devicesNanosystems Physics Chemistry Mathematics2022Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.511885

2. Influence of the Gate Oxide and Back Oxide Material Types on Self-heating Effect in Junctionless FinFET

   A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +2

   СтатьяSemiconductor materials and devices2024Цитирований: 1

   ABIABI:AkademIndex/openalex/2024.article.001950