Работы, цитирующие эту работу

Работ: 2

Работа: Extraction of Schottky diode parameters from forward current-voltage characteristics

1. Tuning barrier height and enhancing electrical properties of MOS heterojunctions using Fe2O3 doped MoO3 nanocomposite interlayer on Ni/Cr/n-GaN for optoelectronic devices

   Karri Aswini, Chaitanya Kumar Kunapalli, K. Munirathnam +7

   СтатьяSemiconductor materials and interfacesPhysica B Condensed Matter2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.001641

2. Temperature-dependent dark I–V transport and barrier inhomogeneity in VTE-grown CdTe/Si heterojunction

   I.B. Sapaev, S.O. Sadullaev, Kh. N. Juraev +4

   СтатьяSemiconductor materials and interfacesResults in Physics2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.006836