Работы, цитирующие эту работу

Работ: 2

Работа: Optoelectronic properties of CdTe/Si heterojunction prepared by pulsed Nd:YAG-laser deposition technique

1. Modeling and Theoretical Study of p-n Heterojunctions Based on CdTe/Si: Band Alignment, Carrier Transport, and Temperature-Dependent Electrophysical Properties

   S. Sadullaev, I. B. Sapaev, Khidoyat E. Abdikarimov

   СтатьяAdvanced Semiconductor Detectors and MaterialsEast European Journal of Physics2025Цитирований: 2

   ABIABI:AkademIndex/openalex/2025.article.001643

2. Temperature-dependent dark I–V transport and barrier inhomogeneity in VTE-grown CdTe/Si heterojunction

   I.B. Sapaev, S.O. Sadullaev, Kh. N. Juraev +4

   СтатьяSemiconductor materials and interfacesResults in Physics2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.006836