Работы, цитирующие эту работу

Работ: 4

Работа: Dependence of the accuracy of the silicon diode temperature sensors for cryogenic thermometry on the spread of their parameters

1. Distribution of impurities in base-depleted region of diode temperature sensor

   R. R. Bebitov, O. A. Abdulkhaev, D. M. Yodgorova +5

   СтатьяChalcogenide Semiconductor Thin FilmsLow Temperature Physics2024Цитирований: 2

   ABIABI:AkademIndex/openalex/2024.article.002075

2. Defect Formation and Displacement of Atoms on the Surface of a LiF Crystal under Bombardment with Low-Energy Cesium Ions

   Utkirjon Sharopov, O. A. Abdulkhaev, Б. Э. Эгамбердиев +11

   СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2024Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.144568

3. Temperature Response Curve of Silicon Diode Temperature Sensors

   Damir Istamov, O. A. Abdulkhaev, Shukurullo M. Kuliyev +3

   СтатьяAdvanced MEMS and NEMS TechnologiesEast European Journal of Physics2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.009033

4. Properties of Heterophase Bi/Pb Ceramics Synthesized Using Solar Energy in the Temperature Range of 80–340 K

   D. D. Gulamova, S. Z. Mirzaev, S. Kh. Bobokulov +1

   СтатьяPhysics of Superconductivity and MagnetismApplied Solar Energy2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.018815