Работы, цитирующие эту работу

Работ: 4

Работа: Effect of Injection Depletion in p-Si–n-(Si2)1 –x(ZnSe)x (0 ≤ x ≤ 0.01) Heterostructure

1. Peculiarities of the Current–Voltage Characteristic of n-GaP–p-(InSb)1 – x(Sn2)x Heterostructures

   А. С. Саидов, A. Yu. Leĭderman, Sh. N. Usmonov +1

   СтатьяSemiconductor materials and interfacesTechnical Physics Letters2020Цитирований: 1

   ABIABI:AkademIndex/openalex/2020.article.000951

2. Effect of Injection Phenomena on Electrical Properties of pSi--nSi1--xSnx Heterojunctions

   Kh. M. Madaminov

   СтатьяSemiconductor materials and interfacesHerald of the Bauman Moscow State Technical University Series Natural Sciences2021Цитирований: 1

   ABIABI:AkademIndex/openalex/2021.article.002068

3. Current Transfer Mechanism in a Thin-Based Heterosystem Based on A2B6 Compounds

   Sharifa B. Utamuradova, F. A. Giyasova, Khayot Bakhronov +3

   СтатьяSemiconductor materials and interfacesEast European Journal of Physics2025Цитирований: 1

   ABIABI:AkademIndex/openalex/2025.article.002404

4. Statical Currents of p-Si–n-Si1-δSnδ–n+-Si1-δSnδ (0≤δ≤0.04)-Structures with Tin Quantum Dots

   Khurshidjon M. Madaminov, Avazbek Sh. Ikromov, Azizbek A. Abdurakhmonov

   СтатьяSemiconductor materials and interfacesEast European Journal of Physics2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.009021