Работы, цитирующие эту работу

Работ: 5

Работа: Analysis of profiles of atomic distribution over the depth of Si-Me free nanofilm systems

1. Modification of the Surface Properties of Free Si–Cu Films by Implantation of Active Metal Ions

   З. А. Исаханов, И.О. Косимов, Б. Е. Умирзаков +1

   СтатьяSemiconductor materials and interfacesTechnical Physics2020Цитирований: 8

   ABIABI:AkademIndex/openalex/2026.other.365534

2. Effect of Co+-ion implantation on the composition and properties of free Si–Cu nanofilm structures

   З. А. Исаханов, Tulkin Kodirov, A. S. Halmatov +3

   СтатьяMetal and Thin Film MechanicsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2017Цитирований: 3

   ABIABI:AkademIndex/openalex/2026.other.495101

3. Formation of Nanodimensional SiO2 Films on the Surface of a Free Si/Cu Film System by $${\text{O}}_{2}^{ + }$$ Ion Implantation

   Б. Е. Умирзаков, М. К. Рузибаева, З. А. Исаханов +1

   СтатьяIon-surface interactions and analysisTechnical Physics2019Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.492991

4. Distribution of Molybdenum Atoms over Depth of the Surface Layer of a Niobium Single Crystal Produced by Ion Bombardment

   Y. S. Ergashov, S. B. Donaev

   СтатьяIon-surface interactions and analysisJournal of Nano- and Electronic Physics2022Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.095304

5. Study of the critical angle of channeling of active metal ions through thin aluminum films

   З. А. Исаханов, Б. Е. Умирзаков, S. S. Nasriddinov +2

   СтатьяIon-surface interactions and analysisПисьма в журнал технической физики2022Цитирований: 0

   ABIABI:AkademIndex/openalex/2022.article.010394