Работы, цитирующие эту работу

Работ: 4

Работа: Growth of GaInAsSb Alloys by MOCVD and Characterization of GaInAsSb / GaSb p‐n Photodiodes

1. Growth of (InSb)1 − x (Sn2) x films on GaAs substrates by liquid-phase epitaxy

   А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +1

   СтатьяSemiconductor Quantum Structures and DevicesSemiconductors2010Цитирований: 9

   ABIABI:AkademIndex/openalex/2026.other.262319

2. Growth of (GaAs)1 − x (ZnSe) x solid solution films and investigation of their structural and some photoelectric properties

   А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +4

   СтатьяChalcogenide Semiconductor Thin FilmsPhysics of the Solid State2011Цитирований: 8

   ABIABI:AkademIndex/openalex/2026.other.386200

3. Active solar energy material science thermoelectric properties of nGe-p(InSb)1 − x (Sn2) x heterostructures

   А. С. Саидов, Sh. N. Usmonov, U. P. Asatova

   СтатьяAdvanced Thermoelectric Materials and DevicesApplied Solar Energy2010Цитирований: 3

   ABIABI:AkademIndex/openalex/2010.article.000164

4. Liquid-phase epitaxy of the (Si2)1 − x − y (Ge2) x (GaAs) y substitutional solid solution (0 ≤ x ≤ 0.91, 0 ≤ y ≤ 0.94) and their electrophysical properties

   А. С. Саидов, Sh. N. Usmonov, М. С. Саидов

   СтатьяSilicon Nanostructures and PhotoluminescenceSemiconductors2015Цитирований: 3

   ABIABI:AkademIndex/openalex/2026.other.373288