Работы, цитирующие эту работу

Работ: 2

Работа: Power bipolar devices based on silicon carbide

1. Fast Switching 4<i>H</i>-SiC<i> P-i-n</i> Structures Fabricated by Low Temperature Diffusion of Al

   I. G. Atabaev, Kh. N. Juraev, V. A. Pak

   СтатьяSilicon Carbide Semiconductor TechnologiesAdvances in Condensed Matter Physics2017Цитирований: 4

   ABIABI:AkademIndex/openalex/2026.other.390748

2. Research of <i>p</i>‐<i>i</i>‐<i>n</i> Junctions Based on 4<i>H</i>‐SiC Fabricated by Low‐Temperature Diffusion of Boron

   I. G. Atabaev, Kh. N. Juraev

   СтатьяSilicon Carbide Semiconductor TechnologiesAdvances in Materials Science and Engineering2018Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.390749