Работы, цитирующие эту работу

Работ: 3

Работа: X-ray beam induced current—a synchrotron radiation based technique for the <i>in situ</i> analysis of recombination properties and chemical nature of metal clusters in silicon

1. Nickel-Dopant Atom Clusters and their Effect on the Recombination Properties of Silicon

   S.Z. Zaynabidinov, A. O. Kurbanov

   СтатьяSilicon and Solar Cell TechnologiesHerald of the Bauman Moscow State Technical University Series Natural Sciences2019Цитирований: 5

   ABIABI:AkademIndex/openalex/2019.article.000379

2. Suppression of harmful impurity atoms with clusters of nickel impurity atoms in a silicon lattice

   Ismaylov Bayrambay, Ismailov Kanatbay, Kamalov Khayratdin +1

   СтатьяSilicon and Solar Cell TechnologiesAIP conference proceedings2023Цитирований: 4

   ABIABI:AkademIndex/openalex/2026.other.384840

3. Thermal stability parameters of silicon doped with nickel impurity atoms

   B. K. Ismaylov, Kanatbay A. Ismailov, Paraxat Dlimbetov +2

   СтатьяThermal properties of materialsAIP conference proceedings2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.009659