Работы, цитирующие эту работу

Работ: 3

Работа: Electrical properties and recombination activity of copper, nickel and cobalt in silicon

1. Nickel-Dopant Atom Clusters and their Effect on the Recombination Properties of Silicon

   S.Z. Zaynabidinov, A. O. Kurbanov

   СтатьяSilicon and Solar Cell TechnologiesHerald of the Bauman Moscow State Technical University Series Natural Sciences2019Цитирований: 5

   ABIABI:AkademIndex/openalex/2019.article.000379

2. Interaction of deep impurities with radiation defects in n-Si at γ-irradiation

   Sh. Makhkamov, M. Kаrimov, Z. M. Khakimov +4

   СтатьяSilicon and Solar Cell TechnologiesRadiation effects and defects in solids2005Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.235254

3. On the thermostability of electrical properties of p-Si<P, Ni> and p-Si<P, Cu>

   Sh. Makhkamov, M. Kаrimov, A. O. Kurbanov +2

   СтатьяSilicon and Solar Cell TechnologiesRussian Physics Journal2005Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.500801