Работы, цитирующие эту работу

Работ: 4

Работа: Theory of Tunneling

1. Calculation of the Total Current Generated in a Tunnel Diode Under the Action of Microwave and Magnetic Fields

   G. Gulyamov, Sharifa B. Utamuradova, Mukhamadjon G. Dadamirzaev +5

   СтатьяSemiconductor Quantum Structures and DevicesEast European Journal of Physics2023Цитирований: 5

   ABIABI:AkademIndex/openalex/2026.other.410284

2. Investigation of the band spectrum of semiconductors by means of a tunnel diode under pressure

   Z. M. Alekseeva, A. P. Vyatkin, А. П. Дмитриев

   СтатьяAdvancements in Semiconductor Devices and Circuit DesignRussian Physics Journal1981Цитирований: 0

   ABIABI:AkademIndex/openalex/1981.article.000106

3. Three-dimensional modeling of the relationship between static tunneling and the optical absorption coefficient in tunnel diodes

   M.K UKTAMOVA, Sh. Mamadaliev

   СтатьяAdvancements in Semiconductor Devices and Circuit DesignResults in Optics2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.011015

4. Comprehensive Numerical Modeling of Silicon Tunnel Junction for Application in Multijunction Monolithic Solar Cells

   A. É. Atamuratov, B. Q. Jumaboev, M. M. Khalilloev +3

   ПрепринтSemiconductor Quantum Structures and DevicesResearch Square2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.preprint.000275