Работы, цитирующие эту работу

Работ: 2

Работа: Advances in MoS2-Based Field Effect Transistors (FETs)

1. Combined Influence of Gate Oxide and Back Oxide Materials on Self-Heating and DIBL Effect in 2D MOS2-Based MOSFETs

   A. É. Atamuratov, Khushnudbek Sh. Saparov, Ahmed Yusupov +1

   Статья2D Materials and ApplicationsApplied Sciences2023Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.439504

2. Gate Oxide And Back Oxide Materials Combined Influence On Self-Heating And Dibl Effects In 2d Mos<sub>2</sub> Based Mosfet

   Atabek E. Egamberdievich Atamuratov, Khushnudbek Sharifbaevich Saparov, Ahmed Yusupovich Yusupov +1

   ПрепринтAdvancements in Semiconductor Devices and Circuit DesignPreprints.org2023Цитирований: 0

   ABIABI:AkademIndex/openalex/2023.preprint.000052