Работы, цитирующие эту работу

Работ: 2

Работа: Computer Simulation of Range and Damage Distributions of He ions in SiC

1. Computer simulation of SiC and B4C sputtering by Ar+ and He+ ions bombardment

   T.S. Pugacheva, F.G. Jurabekova, Y. Miyagawa +1

   СтатьяIon-surface interactions and analysisNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms1997Цитирований: 3

   ABIABI:AkademIndex/openalex/2026.other.488710

2. Computer simulation of ion implantation with visual observation of the implantation profiles

   Flyura Djurabekova, T.S. Pugacheva, F. F. Umarov +1

   СтатьяIon-surface interactions and analysis2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432)2003Цитирований: 0

   ABIABI:AkademIndex/openalex/2003.article.000176