Работы, цитирующие эту работу

Работ: 2

Работа: Current-voltage characteristic of n-p-p + structures based on a chromium-compensated silicon-germanium solid solution

1. Effect of injection depletion in p-n heterostructures based on solid solutions (Si2)1 − x − y (Ge2) x (GaAs) y , (Si2)1 − x (CdS) x , (InSb)1 − x (Sn2) x , and CdTe1 − x S x

   Sh. N. Usmonov, А. С. Саидов, A. Yu. Leĭderman

   СтатьяNear-Field Optical MicroscopyPhysics of the Solid State2014Цитирований: 7

   ABIABI:AkademIndex/openalex/2014.article.000178

2. Effect of Injection Depletion in p-Si–n-(Si2)1 –x(ZnSe)x (0 ≤ x ≤ 0.01) Heterostructure

   А. С. Саидов, A. Yu. Leyderman, Sh. N. Usmonov +1

   СтатьяSemiconductor materials and interfacesSemiconductors2018Цитирований: 4

   ABIABI:AkademIndex/openalex/2026.other.467166