Работы, цитирующие эту работу

Работ: 3

Работа: (GaMn)As: GaAs-based III–V diluted magnetic semiconductors grown by molecular beam epitaxy

1. Anisotropy of Negative Magnetoresistance in GaMnAs Epitaxial Layers

   A. S. Gazizulina, Aslan Nasirov, A. A. Nebesniy +2

   СтатьяZnO doping and propertiesSemiconductors2021Цитирований: 3

   ABIABI:AkademIndex/openalex/2021.article.001396

2. Optical characteristics of MBE grown GaMnAs embedded with MnAs clusters

   P. B. Parchinskiy, Fu Yu, Se Young Jeong +4

   СтатьяZnO doping and propertiesApplied Surface Science2006Цитирований: 2

   ABIABI:AkademIndex/openalex/2006.article.000138

3. Study of photoluminescence spectra of GaMnAs produced by low-temperature molecular beam epitaxy

   P. B. Parchinskiy, A. Yu. Bobylev, С. И. Власов +2

   СтатьяZnO doping and propertiesSemiconductors2007Цитирований: 2

   ABIABI:AkademIndex/openalex/2007.article.000187