Статья

Structural, electrical, and optical properties of low-doped 4H–SiC chemical vapor deposited epitaxial layers

E. V. KalininaIoffe Institute, 26 Politekhnicheskaya Street, 194021 St. Petersburg, RussiaG. KholujanovIoffe Institute, 26 Politekhnicheskaya Street, 194021 St. Petersburg, RussiaA. S. ZubrilovIoffe Institute, 26 Politekhnicheskaya Street, 194021 St. Petersburg, RussiaВ. Н. СоловьевIoffe Institute, 26 Politekhnicheskaya Street, 194021 St. Petersburg, RussiaDenis Yu. DavydovIoffe Institute, 26 Politekhnicheskaya Street, 194021 St. Petersburg, RussiaA. S. TregubovaIoffe Institute, 26 Politekhnicheskaya Street, 194021 St. Petersburg, RussiaM.P. SheglovIoffe Institute, 26 Politekhnicheskaya Street, 194021 St. Petersburg, RussiaA. P. KovarskiĭMekhanobr-Analyt Co., 8a 21 Liniya V.I., 199026 St. Petersburg, RussiaM. A. YagovkinaMekhanobr-Analyt Co., 8a 21 Liniya V.I., 199026 St. Petersburg, RussiaG. N. ViolinaGerhard PenslAnders HallénRoyal Institute of Technology, Department of Electronics, Electrum, S-164 40 Kista, SwedenAndrey O. KonstantinovACREO AB, Electrum 233, SE 164 40 Kista, SwedenStefan KarlssonACREO AB, Electrum 233, SE 164 40 Kista, SwedenS. RendakovaTDI, Inc., Gaithersburg, Maryland 20877V. DmitrievTDI, Inc., Gaithersburg, Maryland 20877

2001en

ABI

Аннотация

Results of complex studies of structural, optical, and electrical characteristics of 4H–SiC n-type low-doped epitaxial layers grown by the chemical vapor deposition (CVD) method are presented. Characteristics of CVD layers grown on commercial wafers with and without a thin (&lt;0.1 μm) buffer layer grown by liquid phase epitaxy (LPE) between the commercial wafer and CVD epitaxial layer were compared. It has been shown that the LPE filling process caused a significant improvement in the structural quality of CVD layers. Cathodoluminescence (CL) data and electrical characteristics of Schottky barriers (SB) revealed that the LPE layer also made the concentration profiles of the uncompensated donors and recombination centers for holes as well as the hole diffusion lengths more uniform over the CVD layer. According to CL and secondary ion mass-spectroscopy measurements the presence of aluminum as an impurity was detected in initial commercial wafers, as well as having LPE and CVD epitaxial layers. Forward current–voltage characteristics of SBs formed on CVD layers with and without a LPE buffer layer followed an exponential relationship with an ideality factor of 1.04–1.06 over six to seven orders of magnitude in current density. A noticeable increase of the breakdown voltage was also observed in samples with a LPE layer.

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Идентификаторы

DOI: 10.1063/1.1406971

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Цитирований: 2Использованных источников: 0

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