V. Dmitriev

Работ: 4

1. 4H-SiC Layers Grown by Liquid Phase Epitaxy on 4H-SiC Off-Axis Substrates

   N.I. Kuznetsov, Andrey Morozov, D. A. Bauman +8

   СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2000Цитирований: 2

   ABIABI:AkademIndex/openalex/2000.article.000164

2. HVPE GaN and AIGaN 'Substrates' for Homoepitaxy

   Yu. Melnik, A. E. Nikolaev, С. И. Степанов +5

   СтатьяGaN-based semiconductor devices and materialsMaterials science forum1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000048

3. 4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe Density

   Evgenia V. Kalinina, A. S. Zubrilov, В. А. Соловьев +6

   СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2000Цитирований: 0

   ABIABI:AkademIndex/openalex/2000.article.000171

4. GaN Grown by Hydride - Metal Organic Vapor Phase Epitaxy (H-MOVPE) on Lattice-Matched Oxide and Silicon Substrates

   Michael E. Mastro, O. Kryliouk, Todd Dann +4

   СтатьяGaN-based semiconductor devices and materialsMaterials science forum2002Цитирований: 0

   ABIABI:AkademIndex/openalex/2002.article.000216