Работы, цитирующие эту работу

Работ: 3

Работа: Structure and photoelectric properties of Si1 − x Sn x epilayers

1. Growth of Ge1 − x Sn x solid solution films and study of their structural properties and some of their photoelectric properties

   А. С. Саидов, Sh. N. Usmonov, U. P. Asatova

   СтатьяPhotonic and Optical DevicesSemiconductors2012Цитирований: 4

   ABIABI:AkademIndex/openalex/2026.other.506192

2. Charge Transport Mechanism in p--Si--n--(Si2)1--x(CdS)x Semiconductor Structures

   S.Z. Zaynabidinov, Kh. M. Madaminov

   СтатьяIndustrial Engineering and TechnologiesHerald of the Bauman Moscow State Technical University Series Natural Sciences2020Цитирований: 2

   ABIABI:AkademIndex/openalex/2020.article.001008

3. Effect of Injection Phenomena on Electrical Properties of pSi--nSi1--xSnx Heterojunctions

   Kh. M. Madaminov

   СтатьяSemiconductor materials and interfacesHerald of the Bauman Moscow State Technical University Series Natural Sciences2021Цитирований: 1

   ABIABI:AkademIndex/openalex/2021.article.002068