Работы, цитирующие эту работу

Работ: 2

Работа: Liquid phase epitaxy of Ge1−xSnx semiconductor films

1. Growth of Ge1 − x Sn x solid solution films and study of their structural properties and some of their photoelectric properties

   А. С. Саидов, Sh. N. Usmonov, U. P. Asatova

   СтатьяPhotonic and Optical DevicesSemiconductors2012Цитирований: 4

   ABIABI:AkademIndex/openalex/2026.other.506192

2. Optimal Regime for Growth of Epitaxial Germanium Layers from the Liquid Phase Based on Thermodynamic Calculations

   A. Sh. Razzokov, Khushnudbek Eshchanov

   СтатьяPhotonic and Optical DevicesInternational Journal of Thermodynamics2022Цитирований: 1

   ABIABI:AkademIndex/openalex/2022.article.001741