Работы, цитирующие эту работу

Работ: 2

Работа: Optical Properties of <i>n</i>-Type GaAs. II. Formation of Efficient Hole Traps during Annealing in Te-Doped GaAs

1. About Possibility of Development Synergetic Processes in Semiconductors of Type AIIIBV

   Ada Leyderman, А. С. Саидов, Muslim Khashaev +1

   СтатьяAdvanced Semiconductor Detectors and MaterialsJournal of Materials Science Research2013Цитирований: 4

   ABIABI:AkademIndex/openalex/2026.other.499300

2. Lifetime specifics of nonequilibrium carriers in photoelectric cells based on gallium arsenide obtained via the Czochralski method

   A. Yu. Leĭderman, M. M. Khashaev

   СтатьяOptical and Acousto-Optic TechnologiesApplied Solar Energy2013Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.262321