Работы, цитирующие эту работу

Работ: 2

Работа: 100-period, 1.23-eV bandgap InGaAs/GaAsP quantum wells for high-efficiency GaAs solar cells: toward current-matched Ge-based tandem cells

1. Photosensitivity of pSi-n(Si2)1–x–y(Ge2) x (ZnSe) y heterostructures with quantum dots

   А. С. Саидов, Sh. N. Usmonov, K. A. Amonov +2

   СтатьяSemiconductor materials and interfacesApplied Solar Energy2017Цитирований: 4

   ABIABI:AkademIndex/openalex/2026.other.392482

2. On the Method of Calculation of the Photocurrent in Structures with Periodically Positioned Nanoinclusions

   R. A. Ayukhanov

   СтатьяSemiconductor Quantum Structures and DevicesApplied Solar Energy2018Цитирований: 0

   ABIABI:AkademIndex/openalex/2018.article.000964