Работы, цитирующие эту работу

Работ: 2

Работа: nGepGaAs Heterojunctions

1. Investigation of parameters of Schottky diodes based on chromium silicides

   Makhmudhodzha Isaev, Abdumalik Gaibov, Abdigani Eshkulov

   СтатьяSemiconductor materials and interfacesJournal of Physics Conference Series2020Цитирований: 4

   ABIABI:AkademIndex/openalex/2026.other.401147

2. Investigation of n-CdSp-CdTe Thin Film Heterojunctions

   E. I. Adieovich, Yu. M. Yuabov, G. R. Yagudaev

   СтатьяAdvanced Semiconductor Detectors and Materialsphysica status solidi (a)1971Цитирований: 0

   ABIABI:AkademIndex/openalex/1971.article.000009