Работы, цитирующие эту работу

Работ: 2

Работа: Optoelectronic phenomena in GaAs and GaP layers prepared by nitrogen treatment

1. Using of ion implantation for obtaining nanostructures with the wide band GaP based on GaP

   S. B. Donaev, V N Karimova, A T Azimov +2

   СтатьяNanowire Synthesis and ApplicationsIOP Conference Series Earth and Environmental Science2020Цитирований: 3

   ABIABI:AkademIndex/openalex/2026.other.452998

2. Effect of the Implantation of Al+ Ions on the Composition, Electronic and Crystalline Structure of the GaP(111) Surface

   S. B. Donaev, Б. Е. Умирзаков

   СтатьяSemiconductor Quantum Structures and DevicesSemiconductors2020Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.415746