Работы, цитирующие эту работу

Работ: 2

Работа: Photoluminescence and I–V characteristics of ZnS grown on silicon nanoporous pillar array

1. The Mechanism of the Formation of Binary Compounds Between Zn and S Impurity Atoms in Si Crystal Lattice

   Н. Ф. Зикриллаев, Maruf K. Khakkulov, B. O. Isakov

   СтатьяSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics2023Цитирований: 2

   ABIABI:AkademIndex/openalex/2023.article.002461

2. Effective Charge of Mn and Ni Impurity Atoms in Silicon Under the Influence of An External Electric Field

   B. O. Isakov, Xalmurat M. Iliyev, Zafar B. Khudoynazarov +1

   СтатьяSilicon and Solar Cell TechnologiesEast European Journal of Physics2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.009031