Investigation of the surface recombination rate in polycrystalline films from the A⁶B⁶ compound by the MW-PC method

Abstract In this article, the surface recombination rates in polycrystalline CdTe films obtained on oxidized substrates are studied. The results of the corona discharge effect on the CdTe-SiO 2 –Si-Al structure are presented. In this case, in the static mode, a shift of the short-circuit current spectra to the short-wave region was observed. To analyze the shift of the short-circuit current spectra, the method of microwave probe photoconductivity (MW-PC) was used and non-contact registration of decay transients for excess carriers was carried out. Considering that for CdTe in the wavelength range of about 800–1000 nm, the absorption coefficient increases sharply with the excitation photon energy at the absorption edge. It was found that the surface recombination rate was estimated at 19 ns. It has been determined that the filling of surface traps in CdTe leads to a decrease in the effect of surface recombination.

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