Работы, цитирующие эту работу

Работ: 3

Работа: Carrier transport mechanisms in semiconductor nanostructures and devices

1. Mechanisms of Current Transition in High Compensated Silicon Samples with Zinc Nanoclusters

   Э. У. Арзикулов, M. Radzhabova, Sh. J. Quvondiqov +1

   СтатьяSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics2023Цитирований: 2

   ABIABI:AkademIndex/openalex/2023.article.002686

2. Current Mechanisms in Zinc Diffusion-Doped Silicon Samples at T = 300 K

   Э. У. Арзикулов, M. Radzhabova, Xuemin Cui +6

   СтатьяSemiconductor materials and interfacesEast European Journal of Physics2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.010089

3. Current Mechanisms in Zinc Diffusion-doped Silicon Samples at T = 300 K

   Э. У. Арзикулов, M. Radzhabova, S. N. +4

   ПрепринтAdvancements in Semiconductor Devices and Circuit DesignResearch Square2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.preprint.000148