Работы, цитирующие эту работу

Работ: 2

Работа: Rotating MNOS disk memory device

1. Detection of a charge built in the oxide layer of a metal-oxide-semiconductor field-effect transistor by lateral C-V measurement

   A. É. Atamuratov, D. U. Matrasulov, P. K. Khabibullaev

   СтатьяSemiconductor materials and devicesDoklady Physics2007Цитирований: 4

   ABIABI:AkademIndex/openalex/2026.other.536303

2. Characterising lateral capacitance of MNOSFET with localised trapped charge in nitride layer

   A. É. Atamuratov, Zamira Atamuratova, А. Yusupov +1

   СтатьяSemiconductor materials and devicesResults in Physics2018Цитирований: 3

   ABIABI:AkademIndex/openalex/2026.other.570280