Работы, цитирующие эту работу

Работ: 1

Работа: On the generation-recombination currents in p-n junctions of semiconductors with continuous gap-state spectrum

1. The current characteristics of p—i—n and p+—i—p+ structures based on hydrogenated amorphous silicon at various temperatures and excitation levels

   D. A. Aronov, R. R. Kabulov, Yu. M. Yuabov

   СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1988Цитирований: 4

   ABIABI:AkademIndex/openalex/2026.other.244481