Работы, цитирующие эту работу

Работ: 2

Работа: Mechanism of contact resistance formation in ohmic contacts with high dislocation density

1. Features of the Formation of Ohmic Contacts to n+-InN

   Pavlo Sai, N. V. Safryuk-Romanenko, Dmytro B. But +6

   СтатьяGaN-based semiconductor devices and materialsUkrainian Journal of Physics2019Цитирований: 0

   ABIABI:AkademIndex/openalex/2019.article.001077

2. Influence of heating of charge carriers on the contact resistance of the Schottky barrier

   G. Gulyamov, Q. Umarov, Alisher Z. Soliyev +1

   СтатьяSemiconductor materials and interfacesAIP conference proceedings2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.003180