Работы, цитирующие эту работу

Работ: 2

Работа: Ion assisted MBE growth of SiGe nanostructures

1. Investigation of the silicon ion density during molecular beam epitaxy growth

   G. Eifler, E. Kasper, Х. Б. Ашуров +1

   СтатьяSemiconductor materials and devicesJournal of Vacuum Science & Technology A Vacuum Surfaces and Films2002Цитирований: 1

   ABIABI:AkademIndex/openalex/2002.article.000106

2. Epitaxial growth of Ge nanoislands on Si/Ge heterostructure by ion-assisted MBE method

   Х. Б. Ашуров, Flyura Djurabekova, С. Е. Максимов +3

   СтатьяIon-surface interactions and analysisNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms2011Цитирований: 0

   ABIABI:AkademIndex/openalex/2011.article.000307