Работы, цитирующие эту работу

Работ: 2

Работа: GaN, AlN, and InN: A review

1. Effect of the band-tail states on the exciton peaks in GaN epilayers grown on sapphire substrates

   Tae Won Kang, Sh. U. Yuldashev, Igor L. Bolotin +5

   СтатьяGaN-based semiconductor devices and materialsJournal of Applied Physics2000Цитирований: 1

   ABIABI:AkademIndex/openalex/2000.article.000087

2. On the epitaxy of aluminum nitride on silicon substrates in a chloride-hydride process

   A. N. Efimov, Andrew O. Lebedev, A. Tsaregorodtsev

   СтатьяGaN-based semiconductor devices and materialsTechnical Physics Letters1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000132