Работы, цитирующие эту работу

Работ: 3

Работа: High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

1. Effect of the band-tail states on the exciton peaks in GaN epilayers grown on sapphire substrates

   Tae Won Kang, Sh. U. Yuldashev, Igor L. Bolotin +5

   СтатьяGaN-based semiconductor devices and materialsJournal of Applied Physics2000Цитирований: 1

   ABIABI:AkademIndex/openalex/2000.article.000087

2. Apparatus for growing GaN films on large-area substrates by the method of chloride-hydride vapor-phase epitaxy

   С. И. Степанов, D. Tsvetkov, A. E. Cherenkov

   СтатьяGaN-based semiconductor devices and materialsTechnical Physics Letters1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000248

3. Electronic, magneto-optic and band alignments of MnO2/AlN and MnO2/SiC topological vdW hetrostructures: A DFT study

   Abdulrahman Qais Khaleel, Abhinav Kumar, Farag M. A. Altalbawy +7

   Статья2D Materials and ApplicationsSolid State Communications2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.005034