Работы, цитирующие эту работу

Работ: 5

Работа: Power Rectifiers and Transistors

1. On the theory of double injection in semiconductors with continuous distribution of trapping levels within the Gap

   A. Yu. Leĭderman

   СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1979Цитирований: 3

   ABIABI:AkademIndex/openalex/1979.article.000019

2. On the theory of transient process after reversal of a p–i–n diode current from forward to reverse direction (I)

   D. A. Aronov, R. Mamatkulov

   СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1972Цитирований: 1

   ABIABI:AkademIndex/openalex/1972.article.000018

3. Influence of deep impurity levels on double injection in semiconductors

   P. M. Karageorgy‐Alkalaev, A. Yu. Leĭderman, F. Ya. Rabinovich

   СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1972Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.605836

4. Differential Resistance and Diffusion Capacitance of Junctions in p-n-n+ Structures at high Injection Levels

   D. A. Aronov, Ya. P. Kotov

   ГлаваSilicon and Solar Cell Technologies1971Цитирований: 0

   ABIABI:AkademIndex/openalex/1971.chapter.000002

5. On the theory of transient process after reversal of a p–i–n diode current from forward to reveres direction (II)

   D. A. Aronov, R. Mamatkulov

   СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1973Цитирований: 0

   ABIABI:AkademIndex/openalex/1973.article.000034