Energy levels and heat generation of electron-hole pairs in Ge, GaSb, and InAs doped by some compounds of the II–V and II–VI types

A version of the energy levels of defects formed by molecules of compounds III–V and II–VI doping Ge, GaSb, and InAs is proposed. The heat generation of electron-hole pairs in Ge, GaSb, and InAs doped by InAsm, ZnSe, and CdTe, respectively, is discussed. Each pair is shown to be generated within a single defect.

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