Работы, цитирующие эту работу

Работ: 2

Работа: Properties of Au, Pt, Pd and Rh levels in silicon measured with a constant capacitance technique

1. On several regularities of deep levels of d-impurities in silicon

   Marat S. Yunusov, A. Akhmadaliev, Б. Л. Оксенгендлер +1

   СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1995Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.408791

2. Investigation of the electrophysical properties and structures of impurity-defective complexes in silicon doped with palladium

   Sh. Makhkamov, N.A. Tursunov, M. Kаrimov +4

   СтатьяSilicon Nanostructures and PhotoluminescenceRussian Physics Journal2010Цитирований: 1

   ABIABI:AkademIndex/openalex/2010.article.000276