Работы, цитирующие эту работу

Работ: 2

Работа: Hydrogenation behavior of deep levels in nominally undoped p-CdTe epilayers grown by molecular beam epitaxy

1. Hydrogenation and annealing effects on the trapping times of the minority carriers in In-doped CdTe epitaxial layers grown on p-CdTe (211) substrates

   Sh. U. Yuldashev, Igor L. Bolotin, Y. B. Hou +4

   СтатьяAdvanced Semiconductor Detectors and MaterialsJournal of Applied Physics1999Цитирований: 0

   ABIABI:AkademIndex/openalex/1999.article.000143

2. Annealing Effect on Passivated Deep Levels in GaN Epilayers

   Sh. U. Yuldashev, Tae Won Kang, Woon Hyung Jung +6

   СтатьяGaN-based semiconductor devices and materialsJapanese Journal of Applied Physics2000Цитирований: 0

   ABIABI:AkademIndex/openalex/2000.article.000125