Работы, цитирующие эту работу

Работ: 3

Работа: Diffusion and Electrical Behavior of Zinc in Silicon

1. Photochemical Reorganization of Deep Impurity Centres in Silicon. Dissociation of Donor–Acceptor Pairs

   K. A. Adilov

   СтатьяSilicon Nanostructures and Photoluminescencephysica status solidi (b)1991Цитирований: 0

   ABIABI:AkademIndex/openalex/1991.article.000070

2. Current Mechanisms in Zinc Diffusion-Doped Silicon Samples at T = 300 K

   Э. У. Арзикулов, M. Radzhabova, Xuemin Cui +6

   СтатьяSemiconductor materials and interfacesEast European Journal of Physics2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.article.010089

3. Current Mechanisms in Zinc Diffusion-doped Silicon Samples at T = 300 K

   Э. У. Арзикулов, M. Radzhabova, S. N. +4

   ПрепринтAdvancements in Semiconductor Devices and Circuit DesignResearch Square2024Цитирований: 0

   ABIABI:AkademIndex/openalex/2024.preprint.000148