Работы, цитирующие эту работу

Работ: 2

Работа: A theoretical treatment of GaAs growth by vapour phase transport for {001} orientation

1. Kinetics and growth mechanism of gallium arsenide crystals in gas-phase epitaxy

   L. G. Lavrent’eva

   Статьяnanoparticles nucleation surface interactionsRussian Physics Journal1980Цитирований: 0

   ABIABI:AkademIndex/openalex/1980.article.000078

2. Influence of the AsH3 inlet pressure on the growth of epitaxial gallium arsenide layers in the GaCl-AsH3-H2 system. Range of orientation (115)A-(001)-(115)B

   Г. А. Александрова, И. В. Ивонин, L. G. Lavrent’eva +2

   СтатьяGaN-based semiconductor devices and materialsRussian Physics Journal1988Цитирований: 0

   ABIABI:AkademIndex/openalex/1988.article.000113