Работы, цитирующие эту работу

Работ: 2

Работа: RTS amplitudes in decananometer MOSFETs: 3-D simulation study

1. Simulation of Random Telegraph Noise in Nanometer nMOSFET Induced by Interface and Oxide Trapped Charge

   A. É. Atamuratov, R. Granzner, M. Kittler +3

   ГлаваSemiconductor materials and devicesNATO science for peace and security series. B, Physics and biophysics2013Цитирований: 0

   ABIABI:AkademIndex/openalex/2013.chapter.000013

2. Impacts of Local Oxide Trapped Charge on Electrical and Capacitance Characteristics of SOI FinFet

   A. É. Atamuratov, И. Н. Каримов, Mirzabahrom Foziljonov +3

   СтатьяSemiconductor materials and devicesEast European Journal of Physics2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.009018