Работы, цитирующие эту работу

Работ: 3

Работа: Capacitance Transient Spectroscopy

1. Features of the Formation of Impurity-Defective Centers in Silicon Doped with Chromium

   Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Yuldoshali Ravshanov +30

   СтатьяSilicon and Solar Cell TechnologiesInternational Journal of Emerging Trends in Engineering Research2020Цитирований: 0

   ABIABI:AkademIndex/openalex/2020.article.005153

2. EFFECT OF TEMPERATURE TREATMENT ON THE ENERGY SPECTRUM OF DEFECTS IN SILICON DOPED WITH MOLYBDENUM

   Kh.S. Daliev, Anifa Paluanova

   СтатьяAdvanced Materials and Semiconductor TechnologiesEurasianUnionofScientists2021Цитирований: 0

   ABIABI:AkademIndex/openalex/2021.article.004364

3. Effect of Dysprosium Atoms Introduced During the Growth Phase on the Formation of Radiation Defects in Silicon Crystals

   Kh.S. Daliev, Sharifa B. Utamuradova, Shakhrukh Kh. Daliev +2

   СтатьяSilicon and Solar Cell TechnologiesEast European Journal of Physics2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.009030