Работы, цитирующие эту работу

Работ: 3

Работа: Physical mechanism of gettering of impurity Ni atom clusters in Si lattice

1. Investigation of the Influence of Nickel on the Behavior of Thermal Donors in Silicon

   B. K. Ismaylov, N. F. Zikrillayev, Kanatbay A. Ismailov +2

   СтатьяSilicon and Solar Cell TechnologiesEast European Journal of Physics2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.009032

2. Thermal stability parameters of silicon doped with nickel impurity atoms

   B. K. Ismaylov, Kanatbay A. Ismailov, Paraxat Dlimbetov +2

   СтатьяThermal properties of materialsAIP conference proceedings2025Цитирований: 0

   ABIABI:AkademIndex/openalex/2025.article.009659

3. The Influence of Impurity Nano- and Microclusters on the Photovoltaic and Electrophysical Properties of Silicon

   N. F. Zikrillaev, K. S. Ayupov, Kh. F. Zikrillaev +4

   СтатьяSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.009999